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III-nitride semiconductors and their modern devices

Development of the nitride-based UV/DUV LEDs Introduction Efficiency limiting process Internal quantum efficiency Current injection efficiency Light extraction efficiency Summary References The homoepitaxial challenge: GaN crystals grown at high pressure for laser diodes and laser diode arrays Introduction Thermodynamics of GaN Melting conditions of GaN High-pressure thermodynamics of GaN: phase diagrams Crystal growth of GaN GaN by HVPE High-nitrogen-pressure solution growth of GaN Ammonothermal growth of GaN Epitaxy of nitrides on single-crystalline HNPS GaN: early results Growth conditions for PAMBE The role of threading dislocations and miscut angle on surface morphology in low-temperature PAMBE The growth of high-In-content InGaN layers by PAMBE The influence of the growth conditions on the optical properties of InGaN QWs Optical lasing from InGaN QWs Laser diodes “Plasmonic” GaN substrates and their use for lasers Laser diode arrays on laterally patterned substrates Background Laser diode arrays on laterally patterned HNPS GaN substrates High-power lasers and arrays on Ammono and HNPS GaN substrates Summary and conclusions References Epitaxial growth and benefits of GaN on silicon Introduction The GaN-on-silicon challenges Lattice mismatch Thermal mismatch Meltback etching Plastic substrate deformation Vertical conductivity Seed layer growth Stress management Stress management by Al(Ga)N layers Buffer layer Interlayers Doping Selective growth Dislocation reduction Light-emitting diodes Electronics RF transistors HV transistors Limits of GaN-on-Si MOVPE technology and new developments Limits of GaN-on-Si MOVPE technology New developments Semipolar GaN Photovoltaic solar cells Micro-electro-mechanical systems (MEMS)References The growth of bulk aluminum nitride Introduction Bulk AlN: a pathway to high-quality AlGaN Growth of AlN crystals Physical vapor transport Hydrid vapor phase epitaxy Solution growth Seeding of AlN crystal growth Properties of state-of-the-art bulk AlN Structural properties Optical properties and impurities Applications and devices Properties of AlN and AlGaN epitaxial layers on AlN Devices on bulk AlN substrates Outlook References Epitaxial growth of nitride quantum dots Introduction GaN quantum dots Molecular beam epitaxy Metalorganic vapor phase epitaxy Growth on non-polar and semipolar planes InxGai_xN quantum dots Phase separation and In segregation effects Stranski-Krastanow growth mode Spontaneous quantum dot formation in InGaN layers Thermal annealing and surface pre-treatment methods InN quantum dots Site-selective growth Summary References Properties of InAlN layers nearly lattice-matched to GaN and their use for photonics and electronics Introduction Growth and structural properties of bulk InAlN layers Growth characteristics of InAlN films Structural properties of bulk InAlN layers Optical and electronic properties of bulk InAlN layers Optical features of GaN/InAlN quantum wells Nearly lattice-matched InAlN/(Al)GaN distributed Bragg reflectors Growth properties Optical properties Applications InAlN cladding layers for edge-emitting lasers InAlN/GaN high electron mobility transistors Growth of InAlN/GaN high electron mobility heterostructures InAlN/GaN HEMTs for high-frequency applications Power performance of InAlN/GaN HEMTs Enhancement-mode InAlN/GaN HEMTs Conclusion References Growth and optical properties of aluminum-rich AlGaN heterostructures Introduction Growth of Si-doped AlGaN on AlN/sapphire templates Growth of Si-doped AlGaN/AlGaN multiple-quantum wells Fabrication of AlGaN MQWs for electron-beam target for deep-ultraviolet light sources Conclusions References Optical and structural properties of InGaN light-emitters on non-polar and semipolar GaN Spontaneous and piezoelectric polarization in InGaN/GaN quantum wells on c-plane, semipolar, and non-polar crystal orientations Performance characteristics of violet, blue, and green (0001) c-plane InGaN quantum well LEDs and laser diodes Growth of non-polar and semipolar GaN buffer layers for device applications Growth of GaN on low-defect bulk GaN substrates Growth of GaN on planar heteroepitaxial substrates Strategies for defect reduction for heteroepitaxially grown GaN Growth of InGaN layers and quantum wells on m-plane and different semipolar surfaces, i.e. (1012), (1011), (2021), (1122)Indium incorporation efficiency for different surface orientations Optical properties of non-polar and semipolar InGaN QWs Performance characteristics of non-polar and semipolar InGaN QW LEDs External quantum efficiencies and emission wavelength Polarization effects and efficiency droop Performance characteristics of non-polar and semipolar InGaN QW lasers Gain characteristics of InGaN quantum-well lasers on non-polar and semipolar GaN and effects of the excitation stripe orientation Fabrication of laser cavities (e.g., etched, cleaved facets)State-of-the-art of non-polar and semipolar InGaN laser diodes Summary and outlook References GaN-based single-nanowire devices Introduction Nanowire synthesis Catalyst-induced NW growth Catalyst-free NW growth Energy conversion Photoconductive detection Photovoltaics Energy harvesting via piezoelectric effects Nanoelectronics GaN NW field-effect transistors GaN NW single-electron transistors GaN/AlN/AlGaN core-shell NW high-electron-mobility transistors GaN/AlN axial-heterostructure resonant tunneling devices GaN/AlN axial-heterostructure single-electron transistors Sensorics Conclusions References Advanced photonic and nanophotonic devices Planar microcavities Linear regime: basics Linear regime: results Non-linear regime: 6asics Non-linear regime: results Photonic crystal Microdisks Nanowires Conclusion References Nitride-based electron devices for high-power/high-frequency applications Relevant GaN properties for electron devices GaN two-terminal devices High-breakdown Schottky diodes Bipolar GaN diodes (p-n or p-i-n)Gunn diodes Tunnel diodes Bipolar junction transistors and heterojunction bipolar transistors (BJT and HBT)Field-effect transistors High-frequency GaN-based HEMTs for RF and mixed-signal applications Lateral GaN high-voltage power transistors Vertical GaN power transistors Conclusion References Intersubband transitions in low-dimensional nitrides Introduction Intersubband transitions in nitride heterostructures: theoretical aspects Effective-mass approximation Band non-parabolicity Hartree approximation Internal electric field Band bending Many-body effects Optical properties of intersubband transitions Intersubband spectroscopy of nitride quantum wells and quantum dots Near-infrared intersubband absorption in polar GaN/AlN quantum wells Intersubband transitions in In-containing heterostructures Coupled GaN/AlN quantum wells Mid-infrared intersubband absorption in AlGaN/GaN quantum wells Tuning ISB transitions to the terahertz frequency domain in polar GaN/AlGaN (quantum wells Intersubband transitions in semipolar GaN/AlN quantum wells Intersubband transitions in cubic GaN/Al(Ga)N quantum wells Intersublevel absorption in GaN/AlN quantum dots GaN-based intersubband light modulators All-optical switches Electro-optical modulators GaN-based intersubband photodetectors Quantum well infrared photodetectors Quantum dot infrared photodetectors Quantum cascade photodetectors GaN-based intersubband light emitters ISB light generation in GaN-based QWs through non-linear- optical processes Intraband emission of GaN-based quantum dots via a resonant Raman process Intersubband luminescent devices Towards THz quantum cascade lasers Conclusions References The slow light in gallium nitride Introduction Slow light: history and recent studies Group velocity in a medium with optical dispersion Light propagation in semiconductors near excitonic lines Electromagnetically induced transparency and other effects Light scattering and diffusion Two mechanisms of light transfer in GaN: ballistic and diffusive Optical dispersion in a medium with several resonances of free and bound excitons Diffusive propagation of light and resonant photon scattering by bound excitons Time-of-flight spectroscopy of light propagating through GaN crystals Excitonic parameters of wide-gap semiconductors Distortion of optical pulse near excitonic resonances Concluding remarks References Nitride devices and their biofunctionalization for biosensing applications Introduction Configurations of nitride devices for sensing Functionalization of nitrides Sensing examples with nitride-based devices References Heterovalent ternary II-IV-N2 compounds: perspectives for a new class of wide-band-gap nitrides Introduction History and crystal growth Crystal structure and symmetry Symmetry Lattice constants Thermodynamic stability Electronic structure Computational methods Band-structure overview Effective-mass Hamiltonians Lattice dynamics Computational method Vibrational modes at the zone center Phonon dispersions and density of states Infrared spectroscopy Raman spectroscopy Elastic and piezoelectric tensors Theoretical considerations Values for nitrides Spontaneous polarization Optical properties Indices of refraction UV dielectric functions Non-linear optics Defects Outlook References Terahertz emission in polaritonic systems with nitrides Introduction Excitons Exciton-polaritons Polariton-based terahertz emitters Upper-to-lower polariton transition THz emission by 2p-exciton to 1s-polariton transition Dipolariton THz emission Conclusion References

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III-Nitride Semiconductors and Inorganic LEDs
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