References

[1] H. P. Maruska, Applied Physics Letters 15, 327 (1969).

[2] H. M. Manasevit, F. M. Erdmann, and W. I. Simpson, Journal of the Electrochemical Society 118, 1864 (1971).

[3] S. Guha and N. A. Bojarczuk, Applied Physics Letters 72, 415 (1998).

[4] S. Guha and N. A. Bojarczuk, Applied Physics Letters 73, 1487 (1998).

[5] H. Ishikawa, G.-Y. Zhao, N. Nakada, T. Egawa, T. Jimbo, and M. Umeno, Japanese Journal of Applied Physics 38, L492 (1999).

[6] A. Dadgar, J. Biasing, A. Diez, A. Alam, M. Heuken, and A. Krost, Japanese Journal of Applied Physics 39, L1183 (2000).

[7] A. Krost and A. Dadgar, Materials Science and Engineering, B 93, 77 (2002).

[8] B. Kuhn and F. Scholz, physica status solidi (a) 188, 629 (2001).

[9] J. Biasing, A. Krost, J. Hertkorn, F. Scholz, L. Kirste, A. Chuvilin, and U. Kaiser, Journal of Applied Physics 105, 033504 (2009).

[10] P. Hageman, S. Haffouz, V. Kirilyuk, A. Grzegorczyk, and P. Larsen, physica status solidi (a) 188, 523 (2001).

[11] P. Chen, R. Zhang, Z. Zhao, D. Xi, B. Shen, Z. Chen, Y. Zhou, S. Xie, W. Lu, and Y. Zheng, Journal of Crystal Growth 225, 150 (2001).

[12] A. Dadgar and A. Krost, MOVPE growth of GaN on Si, in Vacuum Science and Technology, edited by T. Paskova, B. Monemar, and S. Krukowski, Research Signpost, Trivandrum, Kerala, India, 2002.

[13] E. L. Piner, J. C. Roberts, and P. Rajagopal, US020050285142, Gallium nitride materials and methods associated with the same, 1. April 2005.

[14] A. Dadgar, New technology approaches, in III-V Compound Semiconductor, edited by T. Li, M. A. Mastro, and A. Dadgar, CRC Press, Boca Raton, FL, 2011.

[15] F. Reiher, A. Dadgar, J. Biasing, M. Wieneke, and A. Krost, Journal of Crystal Growth 312, 180 (2010).

[16] O. E. Contreras, F. Ruiz-Zepeda, A. Dadgar, A. Krost, and F. A. Ponce, Applied Physics Express 1, 061104 (2008).

[17] A. Dadgar, F. Schulze, M. Wienecke, A. Gadanecz, J. Biasing, P. Veit, T. Hempel, A. Diez, J. Christen, and A. Krost, New Journal of Physics 9, 389 (2007).

[18] F. Ruiz-Zepeda, O. Contreras, A. Dadgar, and A. Krost, Applied Physics Letters 96, 231908 (2010).

[19] F. Schulze, A. Dadgar, J. Biasing, and A. Krost, Journal of Crystal Growth 272, 496 (2004).

[20] F. Schulze, A. Dadgar, J. Biasing, and A. Krost, Applied Physics Letters 84, 4747 (2004).

[21] F. Schulze, A. Dadgar, J. Blasing, T. Hempel, A. Diez, J. Christen, and A. Krost, Journal of Crystal Growth 289, 485 (2006).

[22] F. Schulze, A. Dadgar, J. Blasing, A. Diez, and A. Krost, Applied Physics Letters 88, 121114 (2006).

[23] S. Joblot, E. Feltin, E. Beraudo, P. Vennegues, M. Leroux, F. Omnes, M. Laligt, and Y. Cordier, Journal of Crystal Growth 280, 44 (2005).

[24] V. Lebedev, J. Jinschek, J. Kraufilich, U. Kaiser, B. Schroter, and W. Richter, Journal of Crystal Growth 230, 426 (2001).

[25] F. Schulze, O. Kisel, A. Dadgar, A. Krtschil, J. Blasing, M. Kunze, I. Daumiller, T. Hempel, A. Diez, R. Clos, J. Christen, and A. Krost, Journal of Crystal Growth 299, 399 (2007).

[26] F. Schulze, A. Dadgar, F. Bertram, J. Blasing, A. Diez, P. Veit, R. Clos, J. Christen, and A. Krost, physica status solidi (c) 4, 41 (2007).

[27] F. Schulze, A. Dadgar, A. Krtschil, C. Hums, L. Reissmann, A. Diez, J. Christen, and A. Krost, physica status solidi (c) 5, 2238 (2008).

[28] Y. Okada and Y. Tokumaru, Journal of Applied Physics 56, 314 (1984).

[29] H. Marchand, L. Zhao, N. Zhang, B. Moran, R. Coffie, U. K. Mishra, J. S. Speck,

S. P. DenBaars, and J. A. Freitas, Journal of Applied Physics 89, 7846 (2001).

[30] T. Sugahara, J.-S. Lee, and K. Ohtsuka, Japanese Journal of Applied, Physics 43, L1595 (2004).

[31] S. Zamir, B. Meyler, and J. Salzman, Journal of Crystal Growth 243, 375 (2002).

[32] H. Ishikawa, K. Yamamoto, T. Egawa, T. Soga, T. Jimbo, and M. Umeno, Journal of Crystal Growth 189—190, 178 (1998).

[33] A. Krost, A. Dadgar, G. Strassburger, and R. Clos, physica status solidi (a) 200, 26 (2003).

[34] G. Kipshidze, S. Nikishin, V. Kuryatkov, K. Choi, I. Gherasoiu, T. Prokofyeva, M. Holtz, H. Temkin, K. D. Hobart, F. J. Kub, and M. Fatemi, Journal of Electronic Materials 30, 825 (2001).

[35] S. Fritze, P. Drechsel, P. Stauss, P. Rode, T. Markurt, T. Schulz, M. Albrecht, J. Blasing, A. Dadgar, and A. Krost, Journal of Applied Physics 111, 124505 (2012).

[36] A. Dadgar, T. Hempel, J. Blaasing, O. Schulz, S. Fritze, J. Christen, and A. Krost, physica status solidi (c) 8, 1503 (2011).

[37] K. McKay, Physical Review 94, 877-884 (1954).

[38] A. Dadgar, S. Fritze, O. Schulz, J. Hennig, J. Blasing, H. Witte, A. Diez, U. Heinle, M. Kunze, I. Daumiller, K. Haberland, and A. Krost, Journal of Crystal Growth (2012).

[39] J. Doerschel and F.-G. Kirscht, physica status solidi (a) 64, K85 (1981).

[40] Y. Honda, S. Kato, M. Yamaguchi, and N. Sawaki, physica status solidi (c) 4, 2740 (2007).

[41] J. W. Ager, L. A. Reichertz, Y. Cui, Y. E. Romanyuk, D. Kreier, S. R. Leone, K. M. Yu, W. J. Schaff, and W. Walukiewicz, physica status solidi (c) 6, S413 (2009).

[42] W. Walukiewicz, Physica B: Condensed Matter 302—303, 123 (2001).

[43] E. Sakalauskas, H. Behmenburg, C. Hums, P. Schley, G. Rossbach, C. Giesen, M. Heuken, H. Kalisch, R. H. Jansen, J. Blasing, A. Dadgar, A. Krost, and R. Goldhahn, Journal of Physics D: Applied Physics 43, 365102 (2010).

[44] E. Sakalauskas, O. Tuna, A. Kraus, H. Bremers, U. Rossow, C. Giesen, M. Heuken, A. Hangleiter, G. Gobsch, and R. Goldhahn, physica status solidi (b) 249, 485 (2012).

[45] J. Wei, B. Zhang, G. Wang, B. Fan, Y. Liu, W. Rao, Z. Huang, W. Yang,

T. Chen, and T. Egawa, Japanese Journal of Applied Physics 49, 072104 (2010).

[46] S.-J. Lee, S.-H. Jang, S.-S. Lee, and C.-R. Lee, Journal of Crystal Growth 249, 65 (2003).

[47] R. Liu, F. A. Ponce, A. Dadgar, and A. Krost, Applied Physics Letters 83, 860 (2003).

[48] G. Radtke, M. Couillard, G. A. Botton, D. Zhu, and C. J. Humphreys, Applied Physics Letters 97, 251901 (2010).

[49] G. Radtke, M. Couillard, G. A. Botton, D. Zhu, and C. J. Humphreys, Applied Physics Letters 100, 011910 (2012).

[50] D. Xi, Y. Zheng, P. Chen, Z. Zhao, P. Chen, S. Xie, B. Shen, S. Gu, and R. Zhang, physica status solidi (a) 191, 137 (2002).

[51] S. Kaiser, M. Jakob, J. Zweck, W. Gebhardt, O. Ambacher, R. Dimitrov, A. T. Schremer, J. A. Smart, and J. R. Shealy, Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 18, 733 (2000).

[52] M.-H. Kim, Y.-C. Bang, N.-M. Park, C.-J. Choi, T.-Y. Seong, and S.-J. Park, Applied, Physics Letters 78, 2858 (2001).

[53] S. Tanaka, Y. Kawaguchi, N. Sawaki, M. Hibino, and K. Hiramatsu, Applied Physics Letters 76, 2701 (2000).

[54] R. Armitage, Q. Yang, H. Feick, J. Gebauer, E. R. Weber, S. Shinkai, and K. Sasaki, Applied Physics Letters 81, 1450 (2002).

[55] N. P. Kobayashi, J. T. Kobayashi, P. D. Dapkus, W.-J. Choi, A. E. Bond, X. Zhang, and D. H. Rich, Applied Physics Letters 71, 3569 (1997).

[56] N. P. Kobayashi, J. T. Kobayashi, X. Zhang, P. D. Dapkus, and D. H. Rich, Applied Physics Letters 74, 2836 (1999).

[57] R. F. Davis, T. Gehrke, K. J. Linthicum, E. Preble, P. Rajagopal, C. Ronning, C. Zorman, and M. Mehregany, Journal of Crystal Growth 231, 335 (2001).

[58] C. Park, J. Kang, K. Kim, E.-K. Suh, K. Lim, and K. Nahm, Journal of Crystal Growth 224, 190 (2001).

[59] M. Grundmann, A. Krost, and D. Bimberg, Applied Physics Letters 58, 284 (1991).

[60] G. W. Auner, F. Jin, V. M. Naik, and R. Naik, Journal of Applied Physics 85, 7879 (1999).

[61] R. d. Almeida and I. Baumvol, Physical Review B 62, R16255 (2000).

[62] X.-S. Wang, G. Zhai, J. Yang, L. Wang, Y. Hu, Z. Li, J. Tang, X. Wang, K. Fung, and N. Cue, Surface Science 494, 83 (2001).

[63] J. Kim and H. Yeom, Physical Review B 67 (2003).

[64] C.-L. Wu, J.-C. Wang, M.-H. Chan, T. T. Chen, and S. Gwo, Applied Physics Letters 83, 4530 (2003).

[65] A. Krost, A. Dadgar, J. Biasing, A. Diez, T. Hempel, S. Petzold, J. Christen, and R. Clos, Applied Physics Letters 85, 3441 (2004).

[66] A. Dadgar, R. Clos, G. Strassburger, F. Schulze, P. Veit, T. Hempel, J. Blasing, A. Krtschil, I. Daumiller, M. Kunze, A. Kaluza, A. Modlich, M. Kamp, A. Diez, J. Christen, and A. Krost, Strains and Stresses in GaN Heteroepitaxy: Sources and Control, in Advances in Solid State Physics, edited by B. Kramer, pp. 313-326, Springer, Berlin and Heidelberg, 2004.

[67] A. Dadgar, F. Schulze, T. Zettler, K. Haberland, R. Clos, G. Strafiburger,

J. Blasing, A. Diez, and A. Krost, Journal of Crystal Growth 272, 72 (2004).

[68] D. M. Follstaedt, S. R. Lee, A. A. Allerman, and J. A. Floro, Journal of Applied, Physics 105, 083507 (2009).

[69] S. Raghavan, X. Weng, E. Dickey, and J. M. Redwing, Applied Physics Letters 88, 041904 (2006).

[70] A. E. Romanov and J. S. Speck, Applied Physics Letters 83, 2569 (2003).

[71] P. Cantu, F. Wu, P. Waltereit, S. Keller, A. E. Romanov, U. K. Mishra, S. P. DenBaars, and J. S. Speck, Applied Physics Letters 83, 674 (2003).

[72] I. Manning, X. Weng, M. Fanton, D. Snyder, and J. Redwing, Journal of Crystal Growth 312, 1301 (2010).

[73] L. T. Romano, C. G. van de Walle, J. W. Ager, W. Gotz, and R. S. Kern, Journal of Applied Physics 87, 7745 (2000).

[74] T. W. Weeks jr, E. L. Piner, T. Gehrke, and K. J. Linthicum, Patent US6649287, Gallium nitride materials and methods, 18 November 2003.

[75] E. Frayssinet, Y. Cordier, H. P. D. Schenk, and A. Bavard, physica status solidi (c) 8, 1479 (2011).

[76] E. Feltin, B. Beaumont, M. Laugt, P. d. Mierry, P. Venngus, H. Lahrche, M. Leroux, and P. Gibart, Applied Physics Letters 79, 3230 (2001).

[77] S. Iwakami, M. Yanagihara, O. Machida, E. Chino, N. Kaneko, H. Goto, and

K. Ohtsuka, Japanese Journal of Applied Physics 43, L831 (2004).

[78] T. Markurt, M. Albrecht, et al., to be published.

[79] Y. Kobayashi, K. Kumakura, T. Akasaka, and T. Makimoto, Nature 484, 223 (2012).

[80] T. Makimoto, K. Kumakura, Y. Kobayashi, T. Akasaka, and H. Yamamoto, Applied Physics Express 5, 072102 (2012).

[81] L. Romano, C. van de Walle, B. Krusor, R. Lau, J. Ho, T. Schmidt, J. Ager III, W. Gotz, and R. Kern, Physica B: Condensed Matter 273—274, 50 (1999).

[82] H. Schenk, E. Frayssinet, A. Bavard, D. Rondi, Y. Cordier, and M. Kennard, Journal of Crystal Growth 314, 85 (2011).

[83] J. Xie, S. Mita, L. Hussey, A. Rice, J. Tweedie, J. LeBeau, R. Collazo, and Z. Sitar, Applied Physics Letters 99, 141916 (2011).

[84] J. Xie, S. Mita, A. Rice, J. Tweedie, L. Hussey, R. Collazo, and Z. Sitar, Applied Physics Letters 98, 202101 (2011).

[85] M. A. Moram, M. J. Kappers, F. Massabuau, R. A. Oliver, and C. J. Humphreys, Journal of Applied Physics 109, 073509 (2011).

[86] A. Dadgar and A. Krost, Journal of Applied Physics 110, 096101 (2011).

[87] M. A. Moram, M. J. Kappers, F. Massabuau, R. A. Oliver, and C. J. Humphreys, Journal of Applied Physics 110, 096102 (2011).

[88] S. Fritze, A. Dadgar, H. Witte, M. Bugler, A. Rohrbeck, J. Blasing, A. Hoffmann, and A. Krost, Applied Physics Letters 100, 122104 (2012).

[89] S. Nakamura, T. Mukai, and M. Senoh, Japanese Journal of Applied Physics 31, 2883 (1992).

[90] J. K. Sheu and G. C. Chi, Journal of Physics: Condensed Matter 14, R657 (2002).

[91] P. Hageman, W. Schaff, J. Janinski, and Z. Liliental-Weber, Journal of Crystal Growth 267, 123 (2004).

[92] Matthias Wieneke, Hartmut Witte, Karsten Lange, Martin Feneberg, Armin Dadgar, Jurgen Blasing, Rudiger Goldhahn, and Alois Krost, to be published.

[93] A. Dadgar, A. Alam, T. Riemann, J. Blasing, A. Diez, M. Poschenrieder, M. Strassburg, M. Heuken, J. Christen, and A. Krost, physica status solidi (a) 188, 155 (2001).

[94] Y. Honda, Y. Kuroiwa, M. Yamaguchi, and N. Sawaki, Applied Physics Letters 80, 222 (2002).

[95] J. W. Yang, A. Lunev, G. Simin, A. Chitnis, M. Shatalov, M. A. Khan, J. E. van Nostrand, and R. Gaska, Applied Physics Letters 76, 273 (2000).

[96] X. Zou, K. M. Wong, N. Yu, P. Chen, and K. M. Lau, physica status solidi (c) 9, 572 (2012).

[97] E. Feltin, B. Beaumont, P. Venngus, T. Riemann, J. Christen, J. Faurie, and P. Gibart, physica status solidi (a) 188, 733 (2001).

[98] E. Feltin, B. Beaumont, M. Laugt, P. d. Mierry, P. Venngus, M. Leroux, and P. Gibart, physica status solidi (a) 188, 531 (2001).

[99] P. Kung, D. Walker, M. Hamilton, J. Diaz, and M. Razeghi, Applied Physics Letters 74, 570 (1999).

[100] H. Marchand, N. Zhang, L. Zhao, Y. Golan, S. Rosner, G. Girolami, P. Fini, J. Ibbetson, S. DenBaars, J. Speck, and U. Mishra, MRS Internet Journal of Nitride Semiconductor Research 4.2 (1999).

[101] S. Tanaka, Y. Honda, N. Sawaki, and M. Hibino, Applied Physics Letters 79, 955 (2001).

[102] R. Davis, T. Gehrke, K. Linthicum, T. Zheleva, P. Rajagopal, C. Zorman, and M. Mehregany, MRS Internet Journal of Nitride Semiconductor Research 5S2, W2.1 (2000).

[103] R. Davis, T. Gehrke, K. Linthicum, P. Rajagopal, A. Roskowski, T. Zheleva, E. Preble, C. Zorman, M. Mehregany, U. Schwarz, and J. G. R. Schuck, MRS Internet Journal of Nitride Semiconductor Research 6, 14 (2001).

[104] T. Gehrke, K. Linthicum, P. Rajagopal, E.A. Preble, and R. Davis, MRS Internet Journal of Nitride Semiconductor Research 5S1, W2.4 (2000).

[105] T. M. Katona, M. D. Craven, P. T. Fini, J. S. Speck, and S. P. DenBaars, Applied Physics Letters 79, 2907 (2001).

[106] A. Strittmatter, S. Rodt, L. Reifimann, D. Bimberg, H. Schroder, E. Obermeier, T. Riemann, J. Christen, and A. Krost, Applied Physics Letters 78, 727 (2001).

[107] C.-H. Chiu, C.-C. Lin, D.-M. Deng, D.-W. Lin, J.-C. Li, Z.-Y. Li, G.-W. Shu,

T. -C. Lu, J.-L. Shen, H.-C. Kuo, and K.-M. Lau, IEEE Journal of Quantum Electronics 47, 899 (2011).

[108] H. Lahreche, P. Vennegues, B. Beaumont, and P. Gibart, Journal of Crystal Growth 205, 245 (1999).

[109] S. Tanaka, M. Takeuchi, and Y. Aoyagi, Japanese Journal of Applied Physics 39, L831 (2000).

[110] O. Contreras, F. A. Ponce, J. Christen, A. Dadgar, and A. Krost, Applied Physics Letters 81, 4712 (2002).

[111] T. Riemann, T. Hempel, J. Christen, P. Veit, R. Clos, A. Dadgar, A. Krost,

U. Haboeck, and A. Hoffmann, Journal of Applied Physics 99, 123518 (2006).

[112] A. Dadgar, M. Poschenrieder, A. Reiher, J. Blasing, J. Christen, A. Krtschil, T. Finger, T. Hempel, A. Diez, and A. Krost, Applied Physics Letters 82, 28 (2003).

[113] T. Markurt, T. Lymperakis, J. Neugebauer, P. Drechsel, P. Stauss, T. Schulz, T. Remmele, V. Grillo, E. Rotunno, and M. Albrecht, Physical Review Letters 110, 036103 (2013).

[114] Lattice Power, Lattice Power-First company to offer volume production of high- power silicon substrate-based LEDs, http://www.latticepower.com/english/ newsview.aspx?id=13, 2012.

[115] Eric Virey, iLED 3, 16 (2012).

[116] A. Dadgar, M. Poschenrieder, J. Blasing, K. Fehse, A. Diez, and A. Krost, Applied Physics Letters 80, 3670 (2002).

[117] A. Dadgar, M. Poschenrieder, O. Contreras, J. Christen, K. Fehse, J. Blasing, A. Diez, F. Schulze, T. Riemann, F. Ponce, and A. Krost, physica status solidi (a) 192, 308 (2002).

[118] A. Dadgar, M. Poschenrieder, J. Blasing, O. Contreras, F. Bertram, T. Riemann, A. Reiher, M. Kunze, I. Daumiller, A. Krtschil, A. Diez, A. Kaluza, A. Modlich, M. Kamp, J. Christen, F. Ponce, E. Kohn, and A. Krost, Journal of Crystal Growth 248, 556 (2003).

[119] Q. Dai, M. F. Schubert, M. H. Kim, J. K. Kim, E. F. Schubert, D. D. Koleske, M. H. Crawford, S. R. Lee, A. J. Fischer, G. Thaler, and M. A. Banas, Applied Physics Letters 94, 111109 (2009).

[120] I.-L. Lu, Y.-R. Wu, and J. Singh, Journal of Applied Physics 108, 124508 (2010).

[121] K. Takeda, F. Mori, Y. Ogiso, T. Ichikawa, K. Nonaka, M. Iwaya, S. Kamiyama,

H. Amano, and I. Akasaki, physica status solidi (c) 7, 1916 (2010).

[122] F. Li, S. Lee, J. You, T. Kim, K. Lee, J. Lee, Y. Kwon, and T. Kang, Journal of Crystal Growth 312, 2320 (2010).

[123] H. P. T. Nguyen, K. Cui, S. Zhang, S. Fathololoumi, and Z. Mi, Nanotechnology 22, 445202 (2011).

[124] S. Tripathy, V. K. X. Lin, S. L. Teo, A. Dadgar, A. Diez, J. Blasing, and A. Krost, Applied Physics Letters 91, 231109 (2007).

[125] S. Tripathy, T. E. Sale, A. Dadgar, V. K. X. Lin, K. Y. Zang, S. L. Teo, S. J. Chua, J. Blasing, and A. Krost, Journal of Applied Physics 104, 053106 (2008).

[126] F. Semond, N. Antoine-Vincent, N. Schnell, G. Malpuech, M. Leroux, J. Massies, P. Disseix, J. Leymarie, and A. Vasson, physica status solidi (a) 183, 163 (2001).

[127] M. B. Charles, Y. Zhang, M. J. Kappers, and C. J. Humphreys, physica status solidi (a) 203, 1618 (2006).

[128] P. Saengkaew, A. Dadgar, J. Blaesing, B. Bastek, F. Bertram, F. Reiher, C. Hums, M. Noltemeyer, T. Hempel, P. Veit, J. Christen, and A. Krost, physica status solidi (c) 6, S455 (2009).

[129] T. Egawa, B. Zhang, and H. Ishikawa, IEEE Electron Device Letters 26, 169 (2005).

[130] T. Egawa and B. A. B. A. Shuhaimi, Journal of Physics D: Applied Physics 43, 354008 (2010).

[131] X. B. Zou, H. Liang, and K. M. Lau, physica status solidi (c) 7, 2171 (2010).

[132] E. Alarcon-Llado, S. Bin-Dolmanan, V. K. X. Lin, S. L. Teo, A. Dadgar, A. Krost, and S. Tripathy, Journal of Applied Physics 108, 114501 (2010).

[133] Ka Ming Wong, Xinbo Zou, Peng Chen, and Kei May Lau, IEEE Electron Device Letters 31, 132 (2010).

[134] J. Lee, Y. Tak, J.-Y. Kim, H.-G. Hong, S. Chae, B. Min, H. Jeong, J. Yoo, J.-R. Kim, and Y. Park, Journal of Crystal Growth 315, 263 (2011).

[135] J.-Y. Kim, Y. Tak, H.-G. Hong, S. Chae, J. W. Lee, H. Choi, J. K. Kim, B. Min, Y. Park, U.-I. Chung, M. Kim, S. Lee, N. Cha, Y. Shin, C. Sone, J.-R. Kim, and J.-I. Shim, Proceedings of SPIE, SPIE, 2011.

[136] OSRAM-OS, Success in research: First gallium-nitride LED chips on silicon in pilot stage: OSRAM Opto Semiconductors expands its leading position in high-quality, thin-film LEDs, http://www.osram-os.com/, 12 January 2012.

[137] T. Chen, Y. Wang, P. Xiang, R. Luo, M. Liu, W. Yang, Y. Ren, Z. He, Y. Yang, W. Chen, X. Zhang, Z. Wu, Y. Liu, and B. Zhang, Applied Physics Letters 100, 241112 (2012).

[138] A. Dadgar, J. Blasing, A. Diez, and A. Krost, Applied Physics Express 4, 011001 (2011).

[139] J. Li, J. Y. Lin, and H. X. Jiang, Applied, Physics Letters 88, 171909 (2006).

[140] A. Dadgar, C. Hums, A. Diez, F. Schulze, J. Blasing, and A. Krost, Epitaxy of GaN LEDs on large substrates: Si or sapphire?, in Proceedings of SPIE, volume 6355, pp. 63550R-63550R-8, SPIE, 2006.

[141] A. Dadgar, C. Hums, A. Diez, J. Blasing, and A. Krost, Journal of Crystal Growth 297, 279 (2006).

[142] J.-Y. Kim, Y. Tak, J. Kim, H.-G. Hong, S. Chae, J. W. Lee, H. Choi, Y. Park, U.-I. Chung, J.-R. Kim, and J.-I. Shim, Proceedings of SPIE, volume 8262, SPIE, 2012.

[143] T. P. Chow and M. Ghezzo, MRS Proceedings 423, 9 (1996).

[144] F. Medjdoub, M. Zegaoui, B. Grimbert, D. Ducatteau, N. Rolland, and P. A. Rolland, IEEE Electron Device Letters 33, 1168 (2012).

[145] A. Krtschil, A. Dadgar, and A. Krost, Applied Physics Letters 82, 2263 (2003).

[146] S. Kato, Y. Satoh, H. Sasaki, I. Masayuki, and S. Yoshida, Journal of Crystal Growth 298, 831 (2007).

[147] M. Kuroda, T. Murata, S. Nakazawa, T. Takizawa, M. Nishijima, M. Yanagihara, T. Ueda, and T. Tanaka, in Technical Digest 2008, p. 4674513, IEEE, Piscataway, NJ, 2008.

[148] S. Yoshida, J. Li, T. Wada, and H. Takehara, MRS Proceedings 798, Y7.3 (2003).

[149] S. Yoshida, J. Li, and N. Ikeda, physica status solidi (c) 2, 2593 (2005).

[150] N. Ikeda, J. Li, H. Takehara, T. Wada, and S. Yoshida, Journal of Crystal Growth 275, e1091 (2005).

[151] M. Kuraguchi, Y. Takada, T. Suzuki, M. Hirose, K. Tsuda, W. Saito, Y. Saito, and I. Omura, physica status solidi (a) 204, 2010 (2007).

[152] W. Saito, Y. Takada, M. Kuraguchi, K. Tsuda, and I. Omura, IEEE Transactions on Electron Devices 53, 356 (2006).

[153] R. Wang, Y. Cai, W. C. W. Tang, K. M. Lau, and K. J. Chen, physica status solidi (a) 204, 2023 (2007).

[154] J. Derluyn, M. van Hove, D. Visalli, A. Lorenz, D. Marcon, P. Srivastava, K. Geens, B. Sijmus, J. Viaene, X. Kang, J. Das, F. Medjdoub, K. Cheng, S. Degroote, M. Leys, G. Borghs, and M. Germain, Low leakage high breakdown e-mode GaN DHFET on Si by selective removal of in-situ grown Si3N4, in 2009 IEEE International Electron Devices Meeting (IEDM), pp. 1-4, IEEE, 2009.

[155] Bin Lu, E. Piner, and T. Palacios, IEEE Electron Device Letters 31, 302 (2010).

[156] Y. Niiyama, S. Kato, Y. Sato, M. Iwami, J. Li, H. Takehara, H. Kambayashi, N. Ikeda, and S. Yoshida, MRS Proceedings 955, 0955-I16-06 (2006).

[157] A. Dadgar, F. Schulze, J. Blasing, A. Diez, A. Krost, M. Neuburger, E. Kohn,

1. Daumiller, and M. Kunze, Applied Physics Letters 85, 5400 (2004).

[158] A. Dadgar, M. Neuburger, F. Schulze, J. Blasing, A. Krtschil, I. Daumiller, M. Kunze, K.-M. Gunther, H. Witte, A. Diez, E. Kohn, and A. Krost, physica status solidi (a) 202, 832 (2005).

[159] J. Xie, X. Ni, M. Wu, J. H. Leach, U. Ozgur, and H. Morkoc, Applied Physics Letters 91, 132116 (2007).

[160] S. Nozaki, A. T. Wu, J. J. Murray, T. George, T. Egawa, and M. Umeno, Applied Physics Letters 57, 2669 (1990).

[161] A. Strittmatter, A. Krost, M. Strafiburg, V. Turck, D. Bimberg, J. Blasing, and

J. Christen, Applied Physics Letters 74, 1242 (1999).

[162] C.-L. Wang, J.-R. Gong, W.-T. Liao, W.-L. Wang, T.-Y. Lin, and C.-K. Lin, Solid State Communications 137, 63 (2006).

[163] J. Kuzmik, S. Bychikhin, M. Neuburger, A. Dadgar, A. Krost, E. Kohn, and D. Pogany, IEEE Transactions on Electron Devices 52, 1698 (2005).

[164] K. M. Kelchner, Y.-D. Lin, M. T. Hardy, C. Y. Huang, P. S. Hsu, R. M. Farrell, D. A. Haeger, H. C. Kuo, F. Wu, K. Fujito, D. A. Cohen, A. Chakraborty, H. Ohta, J. S. Speck, S. Nakamura, and S. P. DenBaars, Applied Physics Express

2, 071003 (2009).

[165] A. M. Fischer, Z. Wu, K. Sun, Q. Wei, Y. Huang, R. Senda, D. Iida, M. Iwaya, H. Amano, and F. A. Ponce, Applied Physics Express 2, 041002 (2009).

[166] C.-H. Chiu, D.-W. Lin, C.-C. Lin, Z.-Y. Li, W.-T. Chang, H.-W. Hsu, H.-C. Kuo, T.-C. Lu, S.-C. Wang, W.-T. Liao, T. Tanikawa, Y. Honda, M. Yamaguchi, and N. Sawaki, Applied Physics Express 4, 012105 (2011).

[167] T. Hikosaka, Y. Honda, M. Yamaguchi, and N. Sawaki, Journal of Applied Physics 101, 103513 (2007).

[168] T. Murase, T. Tanikawa, Y. Honda, M. Yamaguchi, H. Amano, and N. Sawaki, Japanese Journal of Applied Physics 50, 01AD04 (2011).

[169] T. Tanikawa, T. Hikosaka, Y. Honda, M. Yamaguchi, and N. Sawaki, physica status solidi (c) 5, 2966 (2008).

[170] T. Tanikawa, D. Rudolph, T. Hikosaka, Y. Honda, M. Yamaguchi, and N. Sawaki, Journal of Crystal Growth 310, 4999 (2008).

[171] A. E. Romanov, T. J. Baker, S. Nakamura, and J. S. Speck, Journal of Applied Physics 100, 023522 (2006).

[172] R. Ravash, J. Biasing, T. Hempel, M. Noltemeyer, A. Dadgar, J. Christen, and A. Krost, Applied, Physics Letters 95, 242101 (2009).

[173] R. Ravash, J. Blaesing, A. Dadgar, and A. Krost, Applied Physics Letters 97, 142102 (2010).

[174] R. Ravash, J. Blaesing, T. Hempel, M. Noltemeyer, A. Dadgar, J. Christen, and A. Krost, physica status solidi (b) 248, 594 (2011).

[175] A. Baski, S. Erwin, and L. Whitman, Surface Science 392, 69 (1997).

[176] A. Dadgar, R. Ravash, P. Veit, G. Schmidt, M. Muller, A. Dempewolf, F. Bertram, M. Wieneke, J. Christen, and A. Krost, Applied Physics Letters 99, 021905 (2011).

[177] R. Ravash, P. Veit, M. Muller, G. Schmidt, A. Dempewolf, T. Hempel, J. Blasing, F. Bertram, A. Dadgar, J. Christen, and A. Krost, physica status solidi (c) 9, 507 (2012).

[178] Y. S. Cho, Q. Sun, I.-H. Lee, T.-S. Ko, C. D. Yerino, J. Han, B. H. Kong, H. K. Cho, and S. Wang, Applied, Physics Letters 93, 111904 (2008).

[179] M. Moram, C. Johnston, M. Kappers, and C. Humphreys, Journal of Crystal Growth 311, 3239 (2009).

[180] S. Li, S. Fundling, U. Sokmen, S. Merzsch, R. Neumann, P. Hinze, T. Weimann,

U. Jahn, A. Trampert, H. Riechert, E. Peiner, H.-H. Wehmann, and A. Waag, physica status solidi (c) 7, 84 (2010).

[181] B. W. Liou, Japanese Journal of Applied Physics 48, 072201 (2009).

[182] B. W. Liou, Thin Solid Films 520, 1084 (2011).

[183] L. Hsu and W. Walukiewicz, Journal of Applied Physics 104, 024507 (2008).

[184] L. A. Reichertz, I. Gherasoiu, K. M. Yu, V. M. Kao, W. Walukiewicz, and J. W. Ager, Applied Physics Express 2, 122202 (2009).

[185] K. Brueckner, F. Niebelschuetz, K. Tonisch, S. Michael, A. Dadgar, A. Krost,

V. Cimalla, O. Ambacher, R. Stephan, and M. A. Hein, Applied Physics Letters 93, 173504 (2008).

[186] T. Zimmermann, M. Neuburger, P. Benkart, F. Hernandez-Guillen, C. Pietzka, M. Kunze, I. Daumiller, A. Dadgar, A. Krost, and E. Kohn, IEEE Electron Device Letters 27, 309 (2006).

 
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