Conclusions

In summary, this chapter is an introduction to new device concepts incorporating GaN NWs as active elements. The NW geometry set the bases for ultimate device miniaturization, and its large surface-to-volume ratio extends the range of size and band-gap engineering beyond the limits of planar systems. The development of new methods to synthesize defect-free III-N NWs with controlled-by-design chemical and physical characteristics (geometrical dimensions, doping profile, radial and axial heterostructuring...) has enabled the introduction of these nano-objects in application domains such as energy conversion, nanoelectronics, optoelectronics, and sensorics. First prototypes of single-NW photoconductors, In-containing core-shell-NW photovoltaic devices, piezo-electric nanogenerators, single-NW FETs, SETs, RTDs, and opto-chemical and electro-chemical transducers, have laid the foundations of a cutting-edge technology with the potential to revolutionize the semiconductor field.

 
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