Conclusions

In this chapter we have reviewed the field of ISB transitions in Ill-nitride semiconductors, which has emerged within the last fifteen years following the progress in terms of epitaxial growth of these materials with atomic-layer thickness control. The basic properties of ISB transitions in nitrides have been presented, with special emphasis on the effect of internal electric fields. We have also presented an overview of the insight gained on physical properties through spectroscopic investigations of ISB transitions in nitride QWs and QDs. Finally, we have described the progress towards ultrafast ISB devices at fiber-optics telecommunication wavelengths, as well as recent developments towards ISB devices operating in the THz frequency domain, which will certainly constitute a driving line of research in future years.

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