Next >

Graphene-Based Terahertz Electronics and Plasmonics: Detector and Emitter Concepts

Electronic and Plasmonic Properties of Graphene and Graphene Structures Plasma Waves in Two-Dimensional Electron-Hole System in Gated Graphene Heterostructures Introduction Equations of the Model Dispersion Equation for Plasma Waves Limiting Cases Low Temperatures or High Gate Voltages Elevated Temperatures and Low Gate Voltages General Results and Discussion Acknowledgment References Device Model for Graphene Bilayer Field-Effect Transistor Introduction GBL-FET Energy Band Diagrams Boltzmann Kinetic Equation and Its Solutions Ballistic Electron Transport Collisional Electron Transport GBL-FET DC Transconductance GBL-FET AC Transconductance Analysis of the Results and Discussion Conclusions Acknowledgments Dynamic Response of the Hole System in the Gated Section References Electrically-Induced n-i-p Junctions in Multiple Graphene Layer Structures Introduction Equations of the Model Numerical Results Analytical Model The Reverse Current Multiple-GL Structures with Highly Conductive BGL Conclusions Acknowledgments References Tunneling Recombination in Optically Pumped Graphene with Electron-Hole Puddles References Analytical Device Model for Graphene Bilayer Field-Effect Transistors Using Weak Nonlocality Approximation Introduction Device Model and Features of Operation Main Equations of the Model High Top-Gate Voltages Near Threshold Top-Gate Voltages Low Top-Gate Voltages Potential Distributions, Source-Drain Current, and Transconductance High Top-Gate Voltages: Sub-threshold Voltage Range (Δm >> εF)Near Threshold Top-Gate Voltages (Δm ≥ εF)Low Top-Gate Voltages (Δm < εF)Discussion Role of Geometrical Parameters Effect of Electron Scattering Charge Inversion in the Gated Section Interband Tunneling Conclusions Acknowledgments Voltage Dependences of the Fermi Energy and the Energy Gap References Hydrodynamic Model for Electron-Hole Plasma in Graphene Introduction Derivation of Hydrodynamic Equations Effect of Electron-Hole Drag and DC Conductivity of Gated Graphene Plasma and Electron-Hole Sound Waves in Graphene General Dispersion Relation for Collective Excitations Analytical Solutions for Symmetric Bipolar and Monopolar Systems Velocities and Damping Rates of the Waves Comparison with Other Models Discussion of the Results Acknowledgment Dissipative Terms in the Euler Equations Mutual Electron-Hole Friction Friction Caused by Charged Impurities and Phonons References Interplay of Intra- and Interband Absorption in a Disordered Graphene Introduction Basic Equations Dynamic Conductivity Partly Screened Long-Range Disorder Relative Absorption Spectral Dependencies Comparison with Experiment Conclusions Acknowledgment References Voltage-Controlled Surface Plasmon-Polaritons in Double Graphene Layer Structures Introduction Device Model SPP Dispersion in Double Graphene Layer Results and Discussion Conclusions Acknowledgement References Hydrodynamic Electron Transport and Nonlinear Waves in Graphene Introduction Derivation of Hydrodynamic Equations Nonlinear Effects in Plasma-Wave Propagation Formation of Solitons in Gated Graphene 'Shallow-Water' Plasma Waves in the Presence of Steady Electron Flow Excitation of Electron Plasma-Waves by Direct Current Discussion of the Results Conclusions Acknowledgement Calculation of Average Values Weak Nonlocality Approximation for Poisson Equation References Effect of Self-Consistent Electric Field on Characteristics of Graphene p-i-n Tunneling Transit-Time Diodes Introduction Equations of the Model Spatial Potential Distributions and Current-Voltage Characteristics GTUNNETT Admittance Discussion Conclusions Acknowledgments References Damping Mechanism of Terahertz Plasmons in Graphene on Heavily Doped Substrate Introduction Equations of the Model Ungated Plasmons Gated Plasmons Conclusions Acknowledgments References Active Guiding of Dirac Plasmons in Graphene Vertical Electron Transport in van der Waals Heterostructures with Graphene Layers Introduction General Equations of the Model The Peltier Cooling Electric Fields versus Current and Current- Voltage Characteristics Potential Profiles Discussions Limiting Cases Role of the pn - En Relation Electron Heating in the Barrier Layers Quantum Capacitance Contact Effects Conclusions Acknowledgments Capture Parameter References Giant Plasmon Instability in Dual- Grating-Gate Graphene Field-Effect Transistor Introduction Mechanisms of Dyakonov-Shur and Ryzhii-Satou-Shur Instabilities Simulation Model Results and Discussion Conclusion Acknowledgments References Detectors Based on Lateral Transport in Graphene and Graphene Structures Plasma Mechanisms of Resonant Terahertz Detection in a Two-Dimensional Electron Channel with Split Gates Introduction Equations of the Model Plasma Resonances Resonant Electron Heating Rectified Current and Detector Responsivity Comparison of Dynamic and Heating Mechanisms Temperature Dependences of the Detector Responsivity and Detectivity Discussion Conclusions Acknowledgments References Terahertz and Infrared Photodetection Using p-i-n Multiple-Graphene-Layer Structures Introduction Responsivity and Detectivity Features of GLPD with Electrically Induced Junction Dynamical Response Comparison with QWIPs and QDIPs Discussion and Conclusions Acknowledgments Effect of Vertical Screening in Multiple GL-Structures References Negative and Positive Terahertz and Infrared Photoconductivity in Uncooled Graphene Introduction GL Conductivity Dependence on the Carrier Temperature Generation-Recombination and Energy Balance Equations GL Photoconductivity Clustered Impurities and Decorated GLs: Long-Range Scattering Responsivity of the GL-Based Photodetectors Heavily Doped GLs Conclusions Funding Acknowledgments Disclosures References Population Inversion and Negative Conductivity in Graphene and Graphene Structures Negative Dynamic Conductivity of Graphene with Optical Pumping Introduction Equations of the Model Weak Pumping Strong Pumping Conclusions Acknowledgment References Population Inversion of Photoexcited Electrons and Holes in Graphene and Its Negative Terahertz Conductivity Introduction Qualitative Pattern Frequency Dependence of the Conductivity Heating of Electrons and Holes Discussion Acknowledgements References Negative Terahertz Dynamic Conductivity in Electrically Induced Lateral p-i-n Junction in Graphene Introduction Device Model and Terminal AC Conductance Self-Excitation of Plasma Oscillations Conclusions Acknowledgments References Threshold of Terahertz Population Inversion and Negative Dynamic Conductivity in Graphene Under Pulse Photoexcitation Introduction Formulation of the Model Results and Discussion Time Evolution of Quasi-Fermi Level and Carrier Temperature Time Evolution of Dynamic Conductivity for High-and Low-Quality Graphene Optical-Phonon Emission versus Other Recombination Mechanisms Conclusions Acknowledgments References Double Injection in Graphene p-i-n Structures Introduction Model The Structures Under Consideration Equations of the Model Boundary Conditions Dimensionless Equations and Boundary Conditions Injection Characteristics (Analytical Approach for a Special Case)Numerical Results Current-Voltage Characteristics Discussion Conclusions Acknowledgments References Carrier-Carrier Scattering and Negative Dynamic Conductivity in Pumped Graphene Introduction Intraband Dynamic Conductivity General Equations Analysis of Intraband and Net Dynamic Conductivity Discussion of the Results Conclusions Evaluation of Coulomb Integrals Acknowledgments References Negative Terahertz Conductivity in Disordered Graphene Bilayers with Population Inversion Negative Terahertz Conductivity in Remotely Doped Graphene Bilayer Heterostructures Introduction Device Model Main Equations Scattering Mechanisms Net THz Conductivity Results and Analysis Discussion Conclusions Acknowledgments References Stimulated Emission and Lasing in Graphene and Graphene Structures Feasibility of Terahertz Lasing in Optically Pumped Epitaxial Multiple Graphene Layer Structures Introduction Model MGL Structure Net Dynamic Conductivity Frequency Characteristics of Dynamic Conductivity Role of the Bottom GL Condition of Lasing Conclusions Acknowledgments Recombination References Terahertz Lasers Based on Optically Pumped Multiple Graphene Structures with Slot-Line and Dielectric Waveguides Introduction Device Model Results and Discussion Conclusions Acknowledgments References Observation of Amplified Stimulated Terahertz Emission from Optically Pumped Heteroepitaxial Graphene-on-Silicon Materials Introduction Theoretical Model Graphene on Silicon Sample for the Experiment Experimental Results and Discussion Conclusion Acknowledgments References Toward the Creation of Terahertz Graphene Injection Laser Introduction Device Model Equations of the Model Effective Temperatures and Current-Voltage Characteristics (Analytical Analysis)Low Voltages Special Cases Long Optical Phonon Decay Time Effective Temperatures and Current-Voltage Characteristics (Numerical Results)Dynamic Conductivity Limitations of the Model and Discussion Conclusions Acknowledgments References Ultrafast Carrier Dynamics and Terahertz Emission in Optically Pumped Graphene at Room Temperature Introduction Theory and Background Sample and Characterization Experiments Results and Discussion Conclusion Acknowledgments References Spectroscopic Study on Ultrafast Carrier Dynamics and Terahertz Amplified Stimulated Emission in Optically Pumped Graphene Introduction Carrier Relaxation and Recombination Dynamics in Optically Pumped Graphene Experiments Experimental Setup Samples and Characterizations Exfoliated graphene on SiО2/Si Heteroepitaxial graphene on 3C-SiC/Si Results and Discussions Exfoliated graphene on SiО2/Si Heteroepitaxial graphene on 3C-SiC/Si Conclusion Acknowledgements References Gain Enhancement in Graphene Terahertz Amplifiers with Resonant Structures Introduction FDTD Model Results and Discussion Conclusions Acknowledgments References Plasmonic Terahertz Lasing in an Array of Graphene Nanocavities The Gain Enhancement Effect of Surface Plasmon Polaritons on Terahertz Stimulated Emission in Optically Pumped Monolayer Graphene Introduction Stimulated Terahertz (THz) Photon and Plasmon Emission in Optically Pumped Graphene Experimental Observation of THz Stimulated Plasmon Emission in Optically Pumped Graphene Experimental Setup and Sample Preparation Temporal Profile and Fourier Spectrum of the Population-Inverted Graphene to the THz Pulse Irradiation Spatial Field Distribution of the THz Probe Pulse Intensities Conclusion Acknowledgments References Graphene Surface Emitting Terahertz Laser: Diffusion Pumping Concept Enhanced Terahertz Emission from Monolayer Graphene with Metal Mesh Structure Introduction Principle Experimental Basic Structure of THz Amplifier Measurement Method EM Simulation Model Results and Discussion GaAs + Graphene GaAs + Metal GaAs + Metal + Graphene Conclusion References Terahertz Light-Emitting Graphene-Channel Transistor Toward Single-Mode Lasing Introduction Device Design and Fabrication Design and Fabrication Details Principles of Operation Results and Discussions Broadband THz Light Emission Towards Single-Mode Lasing Conclusions Acknowledgments References Supplementary Material Experimental Methods DFB Cavity Design Parameters Detectors and Emitters Based on Photon/Plasmon Assisted Tunneling between Graphene Layers Injection Terahertz Laser Using the Resonant Inter-Layer Radiative Transitions in Double-Graphene-Layer Structure Double-Graphene-Layer Terahertz Laser: Concept, Characteristics, and Comparison Introduction Device Structures and Principles of Operation Inter-GL and Intra-GL Dynamic Conductivities Terahertz Gain and Gain-Overlap Factors Frequency and Voltage Dependences of the THz Gain Discussion Conclusion Acknowledgments References Surface-Plasmons Lasing in Double-Graphene-Layer Structures Introduction Dynamic Conductivity Tensor Electric Field Distributions, Gain-Overlap Factor, and Modal Gain Conclusions Acknowledgments References Double Injection, Resonant-Tunneling Recombination, and Current-Voltage Characteristics in Double-Graphene-Layer Structures Introduction Model and the Pertinent Equations Spatial and Voltage Dependences of Fermi Energy, Energy Gap, and Potential Role of Scattering on Disorder Current-Voltage Characteristics Conclusions Acknowledgments Functions l(μ) and σ(μ)References Voltage-Tunable Terahertz and Infrared Photodetectors Based on Double-Graphene-Layer Structures Plasmons in Tunnel-Coupled Graphene Layers: Backward Waves with Quantum Cascade Gain Introduction Dispersion Relation for Plasmons in Tunnel-Coupled Layers High-Frequency Nonlocal Tunnel Current Plasmons in the Presence of Tunneling Effects of Interlayer Twist Discussion and Conclusions Acknowledgments Plasmon Modes Supported by the Double Layer Estimate of the Tight-Binding Parameters Analytical Results for the Conductivity: In-Plane Conductivity Tunnel Conductivity References Terahertz Wave Generation and Detection in Double-Graphene Layered van der Waals Heterostructures Introduction Device Description and Principles of Operation Experimental Methods Results and Discussions Conclusion Acknowledgments Funding References Supplementary Information Graphene Layers' Rotation Angle Sensitive Current- Voltage Characteristics Reference Ultra-Compact Injection Terahertz Laser Using the Resonant Inter-Layer Radiative Transitions in Multi-Graphene-Layer Structure Introduction Device Model Results and Discussion Conclusion Calculation of the Tunnel Resonance Broadening Funding References Graphene Based van der Waals Heterostructures for THz Detectors and Emitters Graphene Vertical Hot-Electron Terahertz Detectors Introduction Device Structures and Principle of Operation Vertical Electron Dark Current and Photocurrent Electron Heating by Incoming THz Radiation Responsivity Dark Current Limited Detectivity Role of the Electron Capture Effect of Plasmonic Resonances Limitations of the Model Discussion Conclusions Acknowledgments References Electron Capture in van der Waals Graphene-Based Heterostructures with WS2 Barrier Layers Introduction Model and Electron Wave Functions Electron Capture Probability at Different Scattering Mechanisms Capture due to the Emission of Barrier Optical Phonons Capture due to the Emission of GL Optical Phonons Capture Associated with the Electron-Electron Interaction Results of Numerical Calculations Capture Parameter and Capture Velocity Conclusion Acknowledgments References Resonant Plasmonic Terahertz Detection in Vertical Graphene-Base Hot-Electron Transistors Introduction Device Model and Related Equations Plasma Oscillations and Rectified Current GB-HET Detector Responsivity Current Responsivity Voltage Responsivity Discussion Conclusions Acknowledgments References Nonlinear Response of Infrared Photodetectors Based on van der Waals Heterostructures with Graphene Layers Introduction Device Structure and Model Main Equations Dark Characteristics Photoresponse at Low IR Radiation Intensities Nonlinear Response: High IR Radiation Intensities Comments Conclusions Thermionic Electron Emission Saturation of Absorption Funding Acknowledgments References Effect of Doping on the Characteristics of Infrared Photodetectors Based on van der Waals Heterostructures with Multiple Graphene Layers Introduction Structure of GLIPs and Their Operation Principle Equations of the Model GLIP Responsivity GUP Detectivity Discussion Conclusions Acknowledgments References Real-Space-Transfer Mechanism of Negative Differential Conductivity in Gated Graphene-Phosphorene Hybrid Structures: Phenomenological Heating Model Introduction Model Main Equations of the Model Conductivity of the G-P Channel Carrier Interband Balance Generation-Recombination and Energy Balance Equations General Set of the Equations Numerical Results Discussion Screening in the G-P Channel Mutual Scattering of Electrons and Holes Optical Phonon Heating Relaxation of Substrate Optical Phonons Possible Applications of the G-P Devices Conclusions Acknowledgments References Negative Photoconductivity and Hot-Carrier Bolometric Detection of Terahertz Radiation in Graphene- Phosphorene Hybrid Structures Introduction Model Conductivity of the G-P-Channel Negative Photoconductivity in the G-P Channels Responsivity of the GP-Photodetectors Bandwidth and Gain-Bandwidth Product Detectivity of the GP-Bolometers Discussion General Comments Assumptions Conclusions Short-Range versus Long-Range Scattering Frequency Dependence of the GP- and G-Channel Conductivity Acknowledgments References

Next >

Graphene-Based Terahertz Detectors
Various detection mechanisms are involved in terahertz 2D-material detectors, including the bolometric effect, photothermoelectric (PTE) effect, plasma wave rectification in FET, and so on. Table 6.2 summarizes the performance of representative detectors [69]. The detectivity is estimated from Eq. (2.6),...
(2D Materials for Infrared and Terahertz Detectors)
Electronic and Plasmonic Properties of Graphene and Graphene Structures
Plasma Waves in Two-Dimensional Electron-Hole System in Gated Graphene Heterostructures Plasma waves in the two-dimensional electron-hole system in a graphene-based heterostructure controlled by a highly conducting gate are studied theoretically. The energy spectra of two-dimensional electrons...
(Graphene-Based Terahertz Electronics and Plasmonics: Detector and Emitter Concepts)
Detectors and Emitters Based on Photon/Plasmon Assisted Tunneling between Graphene Layers
Injection Terahertz Laser Using the Resonant Inter-Layer Radiative Transitions in Double-Graphene-Layer Structure We propose and substantiate the concept of terahertz (THz) laser enabled by the resonant electron radiative transitions between graphene layers (GLs) in double-GL structures. We estimate...
(Graphene-Based Terahertz Electronics and Plasmonics: Detector and Emitter Concepts)
Graphene Based van der Waals Heterostructures for THz Detectors and Emitters
Graphene Vertical Hot-Electron Terahertz Detectors We propose and analyze the concept of the vertical hot-electron terahertz (THz) graphene-layer detectors (GLDs) based on the double-GL and multiple-GL structures with the barrier layers made of materials with a moderate conduction band off-set...
(Graphene-Based Terahertz Electronics and Plasmonics: Detector and Emitter Concepts)
Graphene-Based Nanocarbon Electronics
Fundamental research on graphene reveals major scientific discoveries such as Dirac fermions, integer quantum Hall effect, fractional quantum Hall effect, unconventional superconductivity in twisted bilayer graphene, to name just a few [13]. For technology developments, the properties of interests are...
(Nanocarbon Electronics)
Resonant Plasmonic Terahertz Detection in Vertical Graphene-Base Hot-Electron Transistors
We analyze dynamic properties of vertical graphene-base hot- electron transistors (GB-HETs) and consider their operation as detectors of terahertz (THz) radiation using the developed device model. The GB-HET model accounts for the tunneling electron injection from the emitter, electron propagation across...
(Graphene-Based Terahertz Electronics and Plasmonics: Detector and Emitter Concepts)
Polariton-based terahertz emitters
In the previous section we introduced the phenomenon of strong coupling between a microcavity photon and exciton in a solid, and discussed its possible applications. Recently, the different polariton systems were proposed as an effective radiation emitters in the terahertz (THz) range of frequency. Here...
(III-nitride semiconductors and their modern devices)
Damping Mechanism of Terahertz Plasmons in Graphene on Heavily Doped Substrate
Coupling of plasmons in graphene at terahertz frequencies with surface plasmons in a heavily doped substrate is studied theoretically. We reveal that a huge scattering rate may completely damp out the plasmons, so that proper choices of material and geometrical parameters are essential to suppress the...
(Graphene-Based Terahertz Electronics and Plasmonics: Detector and Emitter Concepts)
Plasma Mechanisms of Resonant Terahertz Detection in a Two-Dimensional Electron Channel with Split Gates
We analyze the operation of a resonant detector of terahertz (THz) radiation based on a two-dimensional electron gas (2DEG) channel with split gates. The side gates are used for the excitation of plasma oscillations by incoming THz radiation and control of the resonant plasma frequencies. The central...
(Graphene-Based Terahertz Electronics and Plasmonics: Detector and Emitter Concepts)
Population Inversion of Photoexcited Electrons and Holes in Graphene and Its Negative Terahertz Conductivity
We demonstrate that sufficiently strong optical excitation may result in the population inversion in graphene, so that the real part of the ac conductivity can be negative in the terahertz range of frequencies. We study also how the heating of the electron-hole system influences the effect of negative...
(Graphene-Based Terahertz Electronics and Plasmonics: Detector and Emitter Concepts)