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2D Materials for Infrared and Terahertz Detectors

Historical Aspects of Modern Infrared Technology References Infrared Detector Characterization Classification of Infrared Detectors Photon Detectors Thermal Detectors Detector Figures of Merit Responsivity Noise Equivalent Power Detectivity Quantum Efficiency References Fundamental Detector Performance Limits Photon Detectors Thermal Detectors The Ultimate Performance of HOT HgCdTe Photodiodes SRH Carrier Lifetime Dark Current Density Detectivity Interband Quantum Cascade Infrared Photodetectors (IB QCIPs)References Focal Plane Arrays Monolithic Arrays CCD Devices CMOS Devices Hybrid Arrays INFRARED FPA PERFORMANCE CONSIDERATIONS Modulation Transfer Function Noise Equivalent Difference Temperature Present Status of Infrared FPAs Trends in Development of Infrared FPAs References Relevant Properties of Graphene and Related 2D Materials Relevant Graphene Properties Properties of 2D Crystalline Materials Transition Metal Dichalcogenides Black Phosphorus References Graphene-Based Detectors Types of Detectors Photoconductors Photogating Effect Photovoltaic Detectors Photo-thermoelectric Detectors Bolometers Field-Effect Transistor Detectors Responsivity-enhanced Graphene-based Detectors Graphene-based Thermal Detectors Graphene-Based Terahertz Detectors Graphene-based Detector Performance – the Present Status References Related 2D-Material Detectors General Overview Middle- and Long-Wavelength Infrared Detectors Black Phosphorus Photodetectors Noble Transition Metal Dichalcogenide Photodetectors Terahertz Detectors D-Material Detector Performance – the Present Status References Colloidal Quantum Dot Infrared Detectors Introduction Brief View Imaging Arrays Present Status of CQD Photodiodes References Final Remarks

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Graphene Vertical Hot-Electron Terahertz Detectors
We propose and analyze the concept of the vertical hot-electron terahertz (THz) graphene-layer detectors (GLDs) based on the double-GL and multiple-GL structures with the barrier layers made of materials with a moderate conduction band off-set (such as tungsten disulfide and related materials). The operation...
(Graphene-Based Terahertz Electronics and Plasmonics: Detector and Emitter Concepts)
Graphene-Based Terahertz Detectors
Various detection mechanisms are involved in terahertz 2D-material detectors, including the bolometric effect, photothermoelectric (PTE) effect, plasma wave rectification in FET, and so on. Table 6.2 summarizes the performance of representative detectors [69]. The detectivity is estimated from Eq. (2.6),...
(2D Materials for Infrared and Terahertz Detectors)
Terahertz Detectors
Diverse optoelectronic properties of 2D materials cover a wide range of the electromagnetic spectrum. Recently, efforts have increased to also develop the proof-of-concept for THz photodetectors. The finite and direct bandgap in both the bulk (Eg « 0.35 eV) and monolayer bP (Eg « 2 eV)...
(2D Materials for Infrared and Terahertz Detectors)
Terahertz and Infrared Photodetection Using p-i-n Multiple-Graphene-Layer Structures
We propose to utilize multiple-graphene-layer structures with lateral p-i-n junctions for terahertz and infrared (IR) photodetection and substantiate the operation of photodetectors based on these structures. Using the developed device model, we calculate the *Reprinted with permission from V. Ryzhii,...
(Graphene-Based Terahertz Electronics and Plasmonics: Detector and Emitter Concepts)
Negative and Positive Terahertz and Infrared Photoconductivity in Uncooled Graphene
We develop the model for the terahertz (THz) and infrared (IR) photoconductivity of graphene layers (GLs) at room temperature. The model accounts for the linear GL energy spectrum and the features of the energy relaxation and generation-recombination mechanisms inherent at room temperature, namely, the...
(Graphene-Based Terahertz Electronics and Plasmonics: Detector and Emitter Concepts)
Observation of Amplified Stimulated Terahertz Emission from Optically Pumped Heteroepitaxial Graphene-on-Silicon Materials
We experimentally observed the fast relaxation and relatively slow recombination dynamics of photogenerated electrons/holes in a heteroepitaxial graphene-on-Si material under pumping with a *Reprinted with permission from H. Karasawa, T. Komori, T. Watanabe, A. Satou, H. Fukidome, M. Suemitsu, V. Ryzhii,...
(Graphene-Based Terahertz Electronics and Plasmonics: Detector and Emitter Concepts)
Voltage-Tunable Terahertz and Infrared Photodetectors Based on Double-Graphene-Layer Structures
We propose and theoretically substantiate the concept of terahertz and infrared photodetectors using the resonant radiative transitions between graphene layers (GLs) in double-GL structures. The calculated absorption spectrum and the spectral characteristics of the photodetector responsivity exhibit...
(Graphene-Based Terahertz Electronics and Plasmonics: Detector and Emitter Concepts)
Infrared Detector Characterization
Optical radiation is regarded as the radiation over the range from vacuum ultraviolet to the submillimeter wavelength (25 nm to 3000 pm). The terahertz (THz) region of the electromagnetic spectrum (Fig. 2.1) is often described as the final unexplored area of the spectrum and still presents a challenge...
(2D Materials for Infrared and Terahertz Detectors)
Classification of Infrared Detectors
The majority of optical detectors can be classified into two broad categories: photon detectors (also called quantum detectors) and thermal detectors. Photon Detectors In photon detectors, the radiation is absorbed within the material by interaction with electrons either bound to lattice atoms,...
(2D Materials for Infrared and Terahertz Detectors)
Middle- and Long-Wavelength Infrared Detectors
As shown in Table 7.1, in the longer wavelength infrared spectral region above 3-pm, black phosphorus (bP), black phosphorus-arsenic AsxP,.x (bPAs) alloys, and layered semiconductors with narrow bandgaps and high mobilities among the transition metal dichalcogenides (TMDs) are of great significance toward...
(2D Materials for Infrared and Terahertz Detectors)